Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly

Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly
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Product Details


Aluminum Nitride substrates possess thermal gradient properties that allow for superior heat uniformity. These chemically "clean" substrates meet tough clean room environment requirements for the semiconductor, medical and other stringent applications.


Aluminum Nitride (AlN) materials have high thermal conductivity, high electric insulation and have a coefficient of thermal expansion similar to that of silicon (Si). It is used as a substrate for power module and LED.

Applications


Heat dissipation substrate, LED package, Power module, Wafer bonding, Power resistor. 

Material Characteristics for Alumina Substrates (Al2O3), Zirconia Toughened Alumina Substrates (Al2O3/ZrO2), and Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si3N4)

Condition Unit Al2O3 Al2O3/ZrO2 AlN Si3N4
HA-96-2 HBS ZTA AN-170 AN-200 AN-230 SN-90
Material - - 96% 96.50% Al2O3/ZrO2 AlN AlN AlN Si3N4
Color - - White White White Gray Gray Beige Gray
Bulk density - g/㎤ 3.75 3.75 4.00 3.30 3.28 3.25 3.22
Surface roughness Ra - µm 0.4 0.3 0.2 0.3 0.5 - 0.4
Reflectivity 0.3-0.4mmt % 70 70 80 35 - - -
0.8-1.0mmt 80 80 90 25 - - -
Mechanical Bending strength 3-point method MPa 400 500 700 450 250 200 800
Modulus of elasticity - GPa 330 330 310 320 - - 310
Vickers hardness - GPa 14 14 15 11 - - 15
Fracture toughness IF method MPa・√m 3.0 - 3.5 3.0 - - 6.5
Thermal Coefficient of thermal expansion 40-400°C 10-6/K 6.7 6.7 7.1 4.6 4.6 4.6 2.6
40-800°C 7.8 7.8 8.0 5.2 5.2 5.2 3.1
Thermal conductivity 25°C W/(m・K) 24 24 27 180 200 230 85
300°C 12 12 16 120 130 145 -
Specific heat 25°C J/(㎏・K) 750 750 720 720 720 720 680
Electrical Dielectric constant 1MHz - 9.8 9.8 10.2 9.0 8.7 8.7 9.0
Dielectric loss factor 1MHz 10-3 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Volume resistivity 25°C Ω・㎝ >1014 >1014 >1014 >1014 >1014 >1014 >1014
Breakdown strength DC ㎸/㎜ >15 >15 >15 >15 >15 >15 >15

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