Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly

Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly
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Product Details


Aluminum Nitride substrates possess thermal gradient properties that allow for superior heat uniformity. These chemically "clean" substrates meet tough clean room environment requirements for the semiconductor, medical and other stringent applications.


Aluminum Nitride (AlN) materials have high thermal conductivity, high electric insulation and have a coefficient of thermal expansion similar to that of silicon (Si). It is used as a substrate for power module and LED.


Applications


Heat dissipation substrate, LED package, Power module, Wafer bonding, Power resistor. 

Material Characteristics for Alumina Substrates (Al2O3), Zirconia Toughened Alumina Substrates (Al2O3/ZrO2), and Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si3N4)



Condition

Unit

Al2O3

Al2O3/ZrO2

AlN

Si3N4

HA-96-2

HBS

ZTA

AN-170

AN-200

AN-230

SN-90

Material

-

-

96%

96.50%

Al2O3/ZrO2

AlN

AlN

AlN

Si3N4

Color

-

-

White

White

White

Gray

Gray

Beige

Gray

Bulk density

-

g/㎤

3.75

3.75

4.00

3.30

3.28

3.25

3.22

Surface roughness Ra

-

µm

0.4

0.3

0.2

0.3

0.5

-

0.4

Reflectivity

0.3-0.4mmt

%

70

70

80

35

-

-

-

0.8-1.0mmt

80

80

90

25

-

-

-

Mechanical

Bending strength

3-point method

MPa

400

500

700

450

250

200

800

Modulus of elasticity

-

GPa

330

330

310

320

-

-

310

Vickers hardness

-

GPa

14

14

15

11

-

-

15

Fracture toughness

IF method

MPa・√m

3.0

-

3.5

3.0

-

-

6.5

Thermal

Coefficient of thermal expansion

40-400°C

10-6/K

6.7

6.7

7.1

4.6

4.6

4.6

2.6

40-800°C

7.8

7.8

8.0

5.2

5.2

5.2

3.1

Thermal conductivity

25°C

W/(m・K)

24

24

27

180

200

230

85

300°C

12

12

16

120

130

145

-

Specific heat

25°C

J/(㎏・K)

750

750

720

720

720

720

680

Electrical

Dielectric constant

1MHz

-

9.8

9.8

10.2

9.0

8.7

8.7

9.0

Dielectric loss factor

1MHz

10-3

0.2

0.2

0.2

0.2

0.2

0.2

0.2

Volume resistivity

25°C

Ω・㎝

>1014

>1014

>1014

>1014

>1014

>1014

>1014

Breakdown strength

DC

㎸/㎜

>15

>15

>15

>15

>15

>15

>15

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