Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly

Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly
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Product Details

Introduction

Aluminum Nitride substrates possess thermal gradient properties that allow for superior heat uniformity. These chemically "clean" substrates meet tough clean room environment requirements for the semiconductor, medical and other stringent applications.

Aluminum Nitride (AlN) materials have high thermal conductivity, high electric insulation and have a coefficient of thermal expansion similar to that of silicon (Si). It is used as a substrate for power module and LED.


Applications
Heat dissipation substrate, LED package, Power module, Wafer bonding, Power resistor.

Material Characteristics for Alumina Substrates (Al2O3), Zirconia Toughened Alumina Substrates (Al2O3/ZrO2), and Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si3N4)


Parameter


Condition
Unit
AI1O2

AI2O3/ZrO2
AIN


Si3N4
HA-96-2
HBS
ZTA
AN-170
AN-200
AN-230
SN-90
Material


96%
96.5%
AI2O3/ZrO2
AIN
AIN
AIN
Si3N4
Color


white
white
white
gray
gray
beige
gray
Bulk density

g/cm³
3.75
3.75
4.00
3.30
3.28
3.25
3.22
Surface roughness RA

um
0.4
0.3
0.2
0.3 0.5

0.4
Reflectivity
0.3-0.4mmt
%
70
70
80
35



0.8-1.0mmt
80
80
90
25



Mechanical
Bending strengh
3-point method
MPa
400
500
700
450
250
200
800
Modulus of elasticity

GPa
330
330
310
320


310
Vickers hardness

GPa
14
14
15
11


15
Fracture toughness
IF method
MPa.M
3.0

3.5
3.0


6.5
Thermal
Coefficient of thermal expansion
40-400℃
10-6/K
6.7
6.7
7.1
4.6
4.6
4.6
2.6
40-800℃
7.8
7.8
8.0
5.2
5.2
5.2
3.1
Thermal conductivity
25℃
W/M.K
24
24
27
180
200
230
85
300℃
12
12
16
120
130
145

Specific heat 25℃
J/kg.k
750
750
720
720
720
720
680
Electeical
Dielectric constant
1MHz

9.8
9.8
10.2
9.0
8.7
8.7
9.0
Dielectric loss factor
1MHz
10-3
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Volume resistivity
25℃
Ω.cm
>1014
>1014
>1014
>1014
>1014
>1014
>1014
Breakdown strength
DC
kv/mm
>15
>15
>15
>15
>15
>15
>15

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